- 您现在的位置：买卖IC网 > Sheet目录123 > BYV29X-600,127 (NXP Semiconductors)DIODE RECT 600V 7A SOD113
 BYV29X-600_2 ? NXP B.V. 2007. All rights reserved. Product data sheet Rev. 02 — 4 September 2007 4 of 10 NXP Semiconductors BYV29X-600 Recti?er diode ultrafast 7. Characteristics Table 6. Characteristics Tj = 25 °C unless otherwise speci?ed. Symbol Parameter Conditions Min Typ Max Unit Static characteristics VF forward voltage IF = 8 A; Tj = 150 °C; see Figure 2 - 0.97 1.11 V IF = 8 A; see Figure 2 - 1.12 1.26 V IF = 20 A; see Figure 2 - 1.31 1.45 V IR reverse current VR = 600 V - 2 50 μA VR = 600 V; Tj = 100 °C - 0.1 0.35 mA Dynamic characteristics Qr recovered charge IF =2AtoVR ≥ 30 V; dIF/dt=20A/μs; seeFigure3 - 4070nC trr reverse recovery time IF = 1 A to VR ≥ 30 V; dIF/dt = 100 A/μs; see Figure 3 - 5060ns IRM peak reverse recovery current IF = 10 A to VR ≥ 30 V; dIF/dt=50A/μs; Tj= 100°C; seeFigure3 - 3 5.5 A VFR forward recoveryIF= 10 A; dIF/dt=10A/μs; voltage seeFigure4 - 3.2 - V |